digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115 mcr69 series silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = -40 to +125c, gate open) mcr69-1 mcr69-2 MCR69-3 v drm v rrm 25 50 100 v peak discharge current (2) i tm 750 a on-state rms current (180 conduction angles, t c = 85c) i t(rms) 25 a average on-state current (180 conduction angles, t c = 85c) i t(av) 16 a peak non-repetitive surge current (half-cycle, sine wave, 60hz, t j = 125c) i tsm 300 a circuit fusing consideration (t = 8.3ms) i 2 t 375 a 2 s forward peak gate current (pulse width 1.0s, t c = 85c) i gm 2.0 a forward peak gate power (pulse width 1.0s, t c = 85c) p gm 20 w forward average gate power (t = 8.3ms, t c = 85c) p g(av) 0.5 w operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c mounting torque - 8.0 in. lb. note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage sh all not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the volta ge ratings of the devices are exceeded. note 2: ratings apply for t w = 1ms. note 3: test conditions: i g = 150ma, v d = rated v drm , i tm = rated value, t j = 125c. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 1.5 c/w thermal resistance, junction to ambient r ? ja 60 c/w lead solder temperature (lead length 1/8? from case, 10s max) t l 260 c electrical characteristics (t j = 25c, unless otherwise noted) characteristic symbol min typ max unit off characteristics peak forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t c = 25c t c = 125c i drm, i rrm - - - - 10 2.0 a ma on characteristics peak forward on-state voltage * (i tm = 50a) (4) (i tm = 750a, t w = 1ms) (5) v tm - - - 6.0 1.8 - v gate trigger current (continuous dc) (v ak = 12v, r l = 100 ? ) i gt 2.0 7.0 30 ma gate trigger voltage (continuous dc) (v ak = 12v, r l = 100 ? ) v gt - 0.65 1.5 v gate non-trigger voltage (v ak = 12v, r l = 100 ? , t j = 125c) v gd 0.2 0.40 - v
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr69 series silicon controlled rectifiers holding current ( v d = 12v, initiating current = 200ma, gate open) i h 3.0 15 50 ma latching current (v d = 12v, i g = 150ma) i l - - 60 ma gate controlled turn-on time (6) (v d = rated v drm , i g = 150ma) (i tm = 50a peak) t gt - 1.0 - s dynamic characteristics critical rate of rise of off-state voltage (v d = rated v drm , gate open, exponential waveform, t j = 125c) dv/dt 10 - - v/s critical rate of rise of on-state current (6) (i g = 150ma, t j = 125c) di/dt - - 100 a/s note 4: pulse width 300s, duty cycle 2%. note 5: ratings apply for t w = 1ms. note 6: the gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. mechanical characteristics case to-220ab marking alpha-numeric pin out see below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr69 series silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr69 series silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
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